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Gat e Threshold Voltage V. Switching Safe Operating Area.

I nsulation W ithstand Voltage DC. Normalized On Resistance vs Temperature. We will then send you full dxtasheet by email We never store your card details, these remain with Paypal. Gate Charge test Circuit. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Unclamped Inductive Load Test Circuit. Gat e-body Leakage Current V.

H8NA60F1 datasheet

H8NA60FI is able to ship same day. Gate Charge vs Gate-source Voltage. Safe Operating Area for TO H8nx60fi Stock Can ship immediately Price: Normally days via registered air mail Total Price: We boast our competitive prices and short lead time. Drain- gate Voltage R. Covers your purchase price and original shipping.

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H8NA60FI (STMicroelectronics) – N – Channel Enhancement Mode Fast Power Mos Transistor

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Turn-on Time Rise Time. Drain Current continuous at T. We promise to provide high quality products with competitive prices, fast delivery and excellent services for our customers. We have won the affirmation of international markets for good prices, fast delivery and guaranteed quantity.

H8NA60FI Datasheet PDF – ST Microelectronics

G ate-source Volt age. Timely product updates, keen market sense 5. Specialize in obsolete transistors and hard-to-find parts at cheap price. Single Pulse Avalanche Energy starting T. Source-drain Current Source-drain Current pulsed.

Turn-off Drain-source Voltage Slope. This publication supersedes and replaces all information previously supplied.