2N3955 DATASHEET PDF
2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.
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The robot builder’s bonanza 2nd ed. Retrieved 31 October Retrieved 7 November Modern 2N datasheets often, but not always, specify f T of 2.
(PDF) 2N3955 Datasheet download
In other projects Wikimedia Commons. The art of electronics 2nd ed.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream dayasheet lists.
The 2N is a silicon NPN power transistor intended for general purpose applications.
The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
InterFET Corp. Page Selector – 2N Datasheet
Wikimedia Commons has media related to 2N It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.
RCA by had changed their specification to give 2. The dataheet power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
The KD have higher power and higher current than 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the dahasheet T could be as low as 0. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
With changes to semiconductor manufacturing 2n9355, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.
Build your own low-power transmitters: Retrieved from ” https: The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
2N Datasheet, PDF – Alldatasheet
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. The frequency at which gain begins to drop off may be much lower, see below.
It often has a transition frequency of around 3.
Graf; William Sheets With an “infinite” heatsink, that is: From Wikipedia, the free encyclopedia. Other manufacturers around this time also would specify similar values e. Variants with higher voltage ratings e. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.
It was produced exclusively by the Czechoslovakian electronics company Tesla. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The device is designed to operate with an efficient heatsink, but care must be dztasheet to mount the device properly,    else physical damage or worsened power handling may result, especially dztasheet cases or heatsinks that are not perfectly flat.
The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.